PolarHV TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
IXFH 18N60P
IXFV 18N60P
IXFV 18N60PS
V DSS
I D25
R DS(on)
t rr
=
=
600 V
18 A
400 m Ω
200 ns
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXFH)
V DSS
V DGR
V GS
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M Ω
Continuous
600
600
± 30
V
V
V
V GSM
I D25
I DM
I AR
E AR
E AS
Tranisent
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
± 40
18
45
18
30
1.0
V
A
A
A
mJ
J
PLUS220 (IXFV)
D (TAB)
dv/dt
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 5 Ω
10
V/ns
G
D
S
D (TAB)
P D
T C = 25 ° C
360
W
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
PLUS220SMD (IXFV...S)
T L
T SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
° C
° C
M d
Mounting torque
(TO-247)
1.13/10 Nm/lb.in.
G
S
D (TAB)
Weight
TO-247
PLUS220 & PLUS220SMD
6
4
g
g
G = Gate
S = Source
D = Drain
TAB = Drain
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Features
BV DSS
V GS = 0 V, I D = 250 μ A
600
V
l
l
International standard packages
Unclamped Inductive Switching (UIS)
V GS(th)
V DS = V GS , I D = 2.5 mA
3.0
5.5
V
rated
I GSS
V GS = ± 30 V, V DS = 0 V
± 100
nA
l
Low package inductance
- easy to drive and to protect
I DSS
V DS = V DSS
V GS = 0 V
T J = 125 ° C
25
250
μ A
μ A
Advantages
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
400
m Ω
l
l
Easy to mount
Space savings
? 2006 IXYS All rights reserved
l
High power density
DS99390E(03/06)
相关PDF资料
IXFV22N50PS MOSFET N-CH 500V 22A PLUS220-SMD
IXFV26N50PS MOSFET N-CH 500V 26A PLUS220-SMD
IXFV30N50PS MOSFET N-CH 500V 30A PLUS220-SMD
IXFV36N50PS MOSFET N-CH 500V 36A PLUS220-SMD
IXFV74N20PS MOSFET N-CH 200V 74A PLUS220-S
IXFV96N15PS MOSFET N-CH 150V 96A PLUS220-S
IXFX120N25P MOSFET N-CH 250V 120A PLUS247
IXFX120N30T MOSFET N-CH 120A 300V PLUS247
相关代理商/技术参数
IXFV18N90P 功能描述:MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFV18N90PS 功能描述:MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFV20N80P 功能描述:MOSFET 20 Amps 800V 0.52 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFV20N80PS 功能描述:MOSFET 20 Amps 800V 0.52 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFV22N50P 功能描述:MOSFET 500V 22A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFV22N50PS 功能描述:MOSFET 500V 22A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFV22N60P 功能描述:MOSFET 600V 22A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFV22N60PS 功能描述:MOSFET 600V 22A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube